NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	YARN, KF	en_US
dc.contributor.author	WANG, YH	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:05:52Z	-
dc.date.available	2014-12-08T15:05:52Z	-
dc.date.issued	1989-03-20	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.100747	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4392	-
dc.language.iso	en_US	en_US
dc.title	NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.100747	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	54	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1157	en_US
dc.citation.epage	1159	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1989T690700028	-
dc.citation.woscount	12	-
顯示於類別：	期刊論文