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dc.contributor.authorLo, Shih-Chingen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorYu, Shao-Mingen_US
dc.date.accessioned2014-12-08T15:05:52Z-
dc.date.available2014-12-08T15:05:52Z-
dc.date.issued2007-07-01en_US
dc.identifier.issn0895-7177en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mcm.2006.12.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/4396-
dc.description.abstractIn this paper, an analytical solution of the Poisson equation for double-gate metal-semiconductor-oxide field effect transistor (MOSFET) is presented, where explicit surface potential is derived so that the whole solution is fully analytical. Based on approximations of potential distribution, our solution scheme successfully takes the effect of doping concentration in each region. It provides an accurate description for partially and fully depleted MOSFET devices in different regions of operation. Comparison with numerical data shows that the solution gives good approximations of potential for MOSFETs under different biases and geometry configurations. The solution can be applied to estimate classical and quantum electron density of nanoscale double-gate MOSFETs. (c) 2007 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectanalytical solutionen_US
dc.subjectPoisson equationen_US
dc.subjectsurface potentialen_US
dc.subjectdouble-gate MOSFETen_US
dc.titleAnalytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mcm.2006.12.018en_US
dc.identifier.journalMATHEMATICAL AND COMPUTER MODELLINGen_US
dc.citation.volume46en_US
dc.citation.issue1-2en_US
dc.citation.spage180en_US
dc.citation.epage188en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000247010600017-
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