發展奈米探針與被動電壓對比技術應用到MOSFET故障分析

Abstract

本文研究奈米探針(Nano probe)與被動電壓對比技術並對MOSFET之故障分析(failure analysis)進行應用，我們開發一種最適流程去進行奈米定位(localization)，並發現某些在奈米級積體電路(IC)中對良率(yield)有影響的微缺陷(defect)。此流程有能力將MOSFET為結構的故障元件適當隔離(isolation)並且正確測定出。根據研究結果我們瞭解製程中之故障機制(failure mechanism)與產生的原因(root cause)。為了將缺陷視覺化，電晶體級的電性量測結果也提供了後續物性故障分析尋找故障區塊之依據。

This study pays more attention to understand the reason of defect deterioration on device performance. The state-of-the-art nano probing and passive voltage contrast techniques are established for the failure analysis of MOSFET. We successfully address some of the subtle defects of which seriously influencing the yield of integrated circuits. The developed technique equipped with the nano probing and electrical capability can effectively isolate and characterize the actual site of failed transistors of the malfunctioned devices. As a result, the proposed identification process can identify the failure mechanisms and the root cause. In addition, the electrical characterization at the transistor level also offers an appropriate solution for the following physical analysis to “visualize” the defects. Our study provides a feasible way for the semiconductor manufacturing to target the unpredictable defect site by means of nano probing and passive voltage contrast techniques in the future.