表面處理及上電極金屬對有機場效應電晶體之漏電流分析

Abstract

有機薄膜電晶體上常見之漏電流對特性曲線造成的扭曲現象在本研究中已被詳細的解釋，閘極感應汲極漏電流將造成元件之輸出曲線於靜態時的漂移，而轉換曲線於靜態時的漂移則由閘極感應汲極漏電流和汲極/源極間靜態漏電流所共同提供。另外絕緣層表面之疏水性處理對漏電流的影響亦被分析，經由對絕緣層表面之處理，可使有機半導體分子層在沉積鍵結的過程趨於完整，但伴隨而來的則是漏電流的增加。最後換置不同功函數之金屬當做汲/源極電極材料，並對金屬和有機物接面之接觸電阻對漏電流影響做一分析，在我們的研究中得出漏電流和接觸電阻有直接關係，但接觸電阻與金屬對有機物解離能之差並無直接關聯性。

The origin which caused the distortion of performance curves had been fully analyzed in this thesis. The gate induced drain leakage current will causing the shift in output characteristic curve at off-state. Additionally, the shift in transfer characteristic curves is due to the gate induced drain leakage current and static-state leakage current of source/drain electrode. Furthermore, the influence of surface hydrophobic treatment on leakage current had been analyzed. After treatment on insulator/semiconductor surface, the order of organic semiconductor will tend to integrity. But the leakage current is the inevitable supplementary impact. Finally, the material with different work function was used to be the electrode. We analyzed the relationship between the difference of work function and ionization potential (IP) of organic semiconductor, contact resistance, and leakage current. The leakage current had direct correlation with contact resistance, yet to examine the relationship between organic semiconductors and metal is an important work in state-of-the-art OTFTs.