THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD

標題:	THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD
作者:	LIN, W LEI, MD CHANG, CY HSU, WC DI, LB KAI, F 電控工程研究所 Institute of Electrical and Control Engineering
公開日期:	1-十二月-1988
URI:	http://hdl.handle.net/11536/4467
ISSN:
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	27
Issue:	12
起始頁:	L2431
結束頁:	L2433
顯示於類別：	期刊論文