THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD

Full metadata record

DC Field	Value	Language
dc.contributor.author	LIN, W	en_US
dc.contributor.author	LEI, MD	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	HSU, WC	en_US
dc.contributor.author	DI, LB	en_US
dc.contributor.author	KAI, F	en_US
dc.date.accessioned	2014-12-08T15:05:56Z	-
dc.date.available	2014-12-08T15:05:56Z	-
dc.date.issued	1988-12-01	en_US
dc.identifier.issn		en_US
dc.identifier.uri	http://hdl.handle.net/11536/4467	-
dc.language.iso	en_US	en_US
dc.title	THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	12	en_US
dc.citation.spage	L2431	en_US
dc.citation.epage	L2433	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1988R754300060	-
dc.citation.woscount	0	-
Appears in Collections:	Articles