具氧化物之電阻式隨機存取記憶體

Abstract

本篇論文中，我們使用磁控濺鍍的二氧化矽薄膜來實現無機的電阻式記憶體，以及探討後退火製程對元件電性的影響。結果發現經過後退火處理的元件可以展現較好的電性，由其在可靠性量測得到大幅的改善。此外，我們也分析元件在高導電態的載子傳輸行為，探討了記憶體元件在不同退火條件下的載子傳輸機制。 為了朝向更低成本以及大量生產的目標發展，我們製作了兩種結構的有機電阻式記憶體元件，分別是AlOx/Alq3 雙層和Alq3/MoO3/Alq3 三層結構。實驗結果顯示:雙層結構的AlOx/Alq3 之介面缺陷態主導元件的記憶體特性，使得元件在電性上展現近6 個數量級的高開關電流比;三層結構的記憶體特性源自具奈米結構的MoO3 與Alq3 的能帶差所形成的載子捕捉中心，並且該元件展現了4 個數量級的高開關電流比，以及可以多次的抹除寫入。

In this thesis, we demonstrate inorganic resistive random access memory (RRAM) using sputtered SiO2 thin films, and investigate the influences of electrical characteristics of the devices with various post-annealing conditions. The results show that devices with RTA treatment can exhibit better electrical characteristics, especially in the significant improvement of endurance. We also analyze carrier transport behaviors in the high conductance state of devices and propose carrier transport mechanisms under different RTA treatments. In addition, we fabricate two different structures of organic RRAM: AlOx/Alq3 bi-layer and Alq3/MoO3/Alq3 tri-layer structures. It is found that interface defects at the AlOx/Alq3 interface dominate the resistive switching of organic RRAM using the bi-layer structure, and the high ON/OFF current ratio near 106 is obtained; the switching behavior of organic RRAM using the tri-layer structure originate from carrier confinement barriers produced by the difference of energy bands between the nano-structure MoO3 and Alq3 layers, and this devices exhibit a high ON/OFF current ratio about 104 and provide many write-read-erase-read cycles.