可撓式有機薄膜電晶體在彎曲應力下的電性探討

Abstract

在本研究中，我們於不□鋼基板上製作可撓式有機薄膜電晶體(Organic thin-film transistors)，並量測在不同應力下的元件特性。我們發現當元件受壓應力彎曲時，元件電性變好；反之受張應力彎曲時，電性則變差。我們推測元件受應力的改變主要來自於主動層內分子間作用力的變化：在張應力狀態時，晶粒-晶粒間的間隙擴大而導致位能障變大，使得載子遷移率變小；反之，當元件處於壓應力狀態時，晶粒-晶粒間的間隙縮小，通道電阻下降，載子遷移率因而提升。

In this study, we fabricated flexible organic thin-film transistors on stainless steel substrates, and their electrical characteristic were measured under different bending conditions. We found that the electrical characteristic was increased under compressed strain and decreased under tensile strain. From the analysis of the results, we deduced that the variety of intermolecular force change the device characteristic under bending strain states. mechanical strains influence the barrier height between the grains of pentacene thin-films, thereby resulting in the variation of device characteristic.