BARRIER EFFECT OF E-BEAM EVAPORATED TUNGSTEN INTERLAYER IN AL/W/PTSI METALLIZATION LAYER

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHIOU, BS	en_US
dc.contributor.author	LO, HS	en_US
dc.contributor.author	CHANG, PH	en_US
dc.date.accessioned	2014-12-08T15:05:57Z	-
dc.date.available	2014-12-08T15:05:57Z	-
dc.date.issued	1988-09-01	en_US
dc.identifier.issn	0361-5235	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/BF02652125	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4490	-
dc.language.iso	en_US	en_US
dc.title	BARRIER EFFECT OF E-BEAM EVAPORATED TUNGSTEN INTERLAYER IN AL/W/PTSI METALLIZATION LAYER	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/BF02652125	en_US
dc.identifier.journal	JOURNAL OF ELECTRONIC MATERIALS	en_US
dc.citation.volume	17	en_US
dc.citation.issue	5	en_US
dc.citation.spage	397	en_US
dc.citation.epage	404	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1988Q130800010	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文