A NEW LATERAL GROWTH FREE FORMATION TECHNIQUE FOR TITANIUM SILICIDE USING THE SI/W/TI TRILAYER STRUCTURE

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DC Field	Value	Language
dc.contributor.author	LIN, MZ	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:05:57Z	-
dc.date.available	2014-12-08T15:05:57Z	-
dc.date.issued	1988-09-01	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4491	-
dc.language.iso	en_US	en_US
dc.title	A NEW LATERAL GROWTH FREE FORMATION TECHNIQUE FOR TITANIUM SILICIDE USING THE SI/W/TI TRILAYER STRUCTURE	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	135	en_US
dc.citation.issue	9	en_US
dc.citation.spage	2342	en_US
dc.citation.epage	2347	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1988P984700042	-
dc.citation.woscount	1	-
Appears in Collections:	Articles

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