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dc.contributor.authorLIN, MZen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:05:57Z-
dc.date.available2014-12-08T15:05:57Z-
dc.date.issued1988-09-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/4491-
dc.language.isoen_USen_US
dc.titleA NEW LATERAL GROWTH FREE FORMATION TECHNIQUE FOR TITANIUM SILICIDE USING THE SI/W/TI TRILAYER STRUCTUREen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume135en_US
dc.citation.issue9en_US
dc.citation.spage2342en_US
dc.citation.epage2347en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1988P984700042-
dc.citation.woscount1-
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