單一摻鈷氧化鋅奈米柱之光電性質研究

Abstract

本篇論文將介紹我如何利用一系列的技術來量測不同摻雜比例的單一摻鈷氧化鋅奈米柱的光學及電學性質。 其中包括利用電子束微影定位及共軛焦顯微系統對不同摻雜比例的單一摻鈷奈米柱量測光激螢光光譜，可得知其光學性質。並且在低溫下量測到清晰的光激螢光光譜訊號：658.5、660、666、672、680.5、686.5、692.5nm，並配合拉曼光譜發現，除658.5、660nm之外，其餘皆為E2之聲子，再比較不同比例的摻雜的單一摻鈷奈米柱之訊號，再針對摻雜比例為90%之單一摻鈷氧化鋅奈米柱做變溫量測，得知其光譜如何隨溫度變化。 接下來利用電子束微影及聚焦離子束製作電極，並利用KEITHLEY 6430及THMS600做電性量測，得知在不同摻雜比例的單一摻鈷氧化鋅奈米柱的電流-電壓特性曲線，比較其相異之處。再利用THMS 600 針對摻雜比例為90%之摻鈷氧化鋅奈米柱做變溫電性量測，溫度範圍為27-107°C，可得其活化能約為0.081eV。

This thesis demonstrates how to make use of various nanotechnology to investigate the optical and electrical properties of individual cobalt doped zinc oxide nanorod. In this work, techniques that applied on the measurement of single nanorod include photoluminescence (PL), Raman spectroscopy, E-beam lithography, focus ion beam, and confocal microscope. At low temperature, we have resolved several peaks at 658.5, 660, 666, 672, 680.5, 682.5, 686.5 and 692.5 nm in the PL spectra. When compared with the Raman spectroscopy results, we determined that those luminescence peaks were associated with the d-d transitions and phonon replica due to the presence of the doped cobalt ion. We also measured temperature dependence of the resistance on a single nanorod device manufactured by E-beam lithography and Focused ion beam system. An activation energy of 0.081eV for the single Co doped ZnO nanorod was obtained in the temperature range from 300 K to 407 K.