标题: | 新颖硒化物Mn2Sn7Bi4Se15与In3.87Pb4.44Sb4.52Se17的合成与特性分析 Synthesis and Characterizations of New Selenides Mn2Sn7Bi4Se15 and In3.87Pb4.44Sb4.52Se17 |
作者: | 李俊明 Lee, Chun-Ming 李积琛 Lee, Chi-Shen 应用化学系硕博士班 |
关键字: | 硒化物;热电材料;半导体;chalcogenide;thermoelectrics;semiconductor |
公开日期: | 2009 |
摘要: | 本论文成功以固态烧结法分别在1023和1173K的温度下,合成一具有新颖结构和矿物vikingite结构之新颖硒化合物,晶系属于单斜体,空间群分别为P21/m (No. 11)和C2/m (No. 12)。Mn2Sn7Bi4Se15晶体结构由两层不同厚度的NaCl(311)结构单元平行c轴无限延伸,晶格常数为a=13.708(3), b=4.1571(8)、 c=26.500(5)、 b=96.20(3), V=1501.2(5) Å3、 Z=2、 R1=3.97%、 wR2=9.58% 和GOF=1.042。In3.87Pb4.44Sb4.52Se17晶体结构分别由NaCl-[100]和CdI2-type两种不同的结构单元组成,晶格常数为a=17.813(4), b=4.0847(8)、 c=23.914(5)、 b=111.56(3), V=1618.2(6) Å3、 Z=2、 R1=4.90%、 wR2=12.24% 和GOF=1.035,此结果经过比对ICSD资料库及SciFinder资料库确认为一新颖结构硒化物。 从导电度的测量得知,In3.87Pb4.44Sb4.52Se17的电阻率随温度上升而下降,属于半导体行为,从UV-VIS漫反射式吸收光谱得知,半导体能隙约为0.73 eV。Mn2Sn7Bi4Se15化合物室温的Seebeck量测值约100μV/K到200μV/K之间,属于P型半导体,在磁性性质方面,为顺磁性且过渡金属为高自旋状态。 New selenides Mn2Sn7Bi4Se15 and In3.87Pb4.44Sb4.52Se17 were prepared by directly reacting the elements in stoichiometric ratios at 1023K and 1173K, respectively. These compounds crystallized in the monoclinic system with space group C2/m (No.12) and P21/m (No. 11), respectively. Mn2Sn7Bi4Se15 is isostructural to the vikingite type that features three-dimensional framework with building units of NaCl(311) types units running parallel to the c-axis. Mn2Sn7Bi4Se15 crystallizes in a monoclinic space group C2/m with a=13.708(3), b=4.1571(8)、 c=26.500(5)、 b=96.20(3), V=1501.2(5) Å3、 Z=2、 R1=3.97%、 wR2=9.58% and GOF=1.042. The structure of In3.87Pb4.44Sb4.52Se17 has a three-dimension framework assembled from two NaCl-[100] and CdI2-type modular units running along the b-axis. In3.87Pb4.44Sb4.52Se17 crystallize in the monoclinic space group P21/m with a=17.813(4), b=4.0847(8)、 c=23.914(5)、 b=111.56(3), V=1618.2(6) Å3、 Z=2、 R1=4.90%、 wR2=12.24% and GOF=1.035. The resistivity decrease with increasing temperature for In3.87Pb4.44Sb4.52Se17, indicative of semiconducting behaviors. Diffuse-reflectance spectra show that the band gaps of In3.87Pb4.44Sb4.52Se17 are about 0.73 eV. According to the Seebeck coefficient measurements, Mn2Sn7Bi4Se15 is p-type semiconductor. Temperature dependence susceptibilities measurements indicate paramagnetic property for Mn2Sn7Bi4Se15 and high-spin for Mn. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079725555 http://hdl.handle.net/11536/45206 |
显示于类别: | Thesis |
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