Fabrication and physical properties of radio frequency sputtered ZnMnSe thin films

doi:10.1143/JJAP.36.4427

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DC Field	Value	Language
dc.contributor.author	Tsai, CT	en_US
dc.contributor.author	Chuu, DS	en_US
dc.contributor.author	Leou, JY	en_US
dc.contributor.author	Chou, WC	en_US
dc.date.accessioned	2014-12-08T15:01:38Z	-
dc.date.available	2014-12-08T15:01:38Z	-
dc.date.issued	1997-07-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.36.4427	en_US
dc.identifier.uri	http://hdl.handle.net/11536/458	-
dc.description.abstract	Zn1-xMnxSe thin films with various Mn concentrations were produced by the radio frequency sputtering technique. As the Mn concentration increased, it was found that two types of crystal structures (zinc blende and wurtzite) compete with each other. The grain size of the Zn1-xMnx Se thin films decreased as Mn concentration x was increased. Moreover, the zone-center optical phonons of Zn1-xMnxSe thin films exhibit an intermediate mode behavior which is consistent with that of the bulk crystals.	en_US
dc.language.iso	en_US	en_US
dc.subject	rf sputtering	en_US
dc.subject	zinc blende	en_US
dc.subject	wurtzite	en_US
dc.subject	intermediate mode behavior	en_US
dc.title	Fabrication and physical properties of radio frequency sputtered ZnMnSe thin films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.36.4427	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS	en_US
dc.citation.volume	36	en_US
dc.citation.issue	7A	en_US
dc.citation.spage	4427	en_US
dc.citation.epage	4430	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1997XR22300044	-
dc.citation.woscount	7	-
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