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dc.contributor.authorHuang, Hsin-Hsiungen_US
dc.contributor.authorZeng, Hung-Yuen_US
dc.contributor.authorLee, Wei-Ien_US
dc.date.accessioned2014-12-08T15:06:03Z-
dc.date.available2014-12-08T15:06:03Z-
dc.date.issued2007-06-01en_US
dc.identifier.issn0370-1972en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssb.200674853en_US
dc.identifier.urihttp://hdl.handle.net/11536/4619-
dc.description.abstractExtended microtunnels with triangular cross sections are demonstrated in GaN layers on sapphire substrates. The depths of the tunnels can easily reach several hundred micrometers by using wet chemical etching. To obtain this result, patterned growth of specially designed GaN layers is carried out on sapphire substrates with metalorganic chemical vapor deposition and subsequently hydride vapor-phase epitaxy techniques. The prepared samples are then chemically etched in molten potassium hydroxide, and microtunnels with triangularly etched cross sections are formed. The planes of the triangular bevels belong to the {11 (2) over bar2} family. The etch rate of the tunnel can be as high as 10 mu m/min under proper etching conditions. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.language.isoen_USen_US
dc.titlePreparation of extended microtunnels in GaN by wet chemical etchingen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1002/pssb.200674853en_US
dc.identifier.journalPHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICSen_US
dc.citation.volume244en_US
dc.citation.issue6en_US
dc.citation.spage1872en_US
dc.citation.epage1876en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000247328200023-
Appears in Collections:Conferences Paper


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