A POLYSILICON-ON-OXIDE (POSOX) ISOLATION STRUCTURE FOR BIPOLAR INTEGRATED-CIRCUITS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	TAN, FL	en_US
dc.contributor.author	WU, NW	en_US
dc.contributor.author	TANG, RB	en_US
dc.date.accessioned	2014-12-08T15:06:03Z	-
dc.date.available	2014-12-08T15:06:03Z	-
dc.date.issued	1987-08-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4625	-
dc.language.iso	en_US	en_US
dc.title	A POLYSILICON-ON-OXIDE (POSOX) ISOLATION STRUCTURE FOR BIPOLAR INTEGRATED-CIRCUITS	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	30	en_US
dc.citation.issue	8	en_US
dc.citation.spage	841	en_US
dc.citation.epage	845	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1987J494200010	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文