THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELING

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DC Field	Value	Language
dc.contributor.author	CHEN, CF	en_US
dc.contributor.author	WU, CY	en_US
dc.contributor.author	LEE, MK	en_US
dc.contributor.author	CHEN, CN	en_US
dc.date.accessioned	2014-12-08T15:06:03Z	-
dc.date.available	2014-12-08T15:06:03Z	-
dc.date.issued	1987-07-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4627	-
dc.language.iso	en_US	en_US
dc.title	THE DIELECTRIC RELIABILITY OF INTRINSIC THIN SIO2-FILMS THERMALLY GROWN ON A HEAVILY DOPED SI SUBSTRATE - CHARACTERIZATION AND MODELING	en_US
dc.type	Article	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	34	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1540	en_US
dc.citation.epage	1552	en_US
dc.contributor.department	工學院	zh_TW
dc.contributor.department	College of Engineering	en_US
dc.identifier.wosnumber	WOS:A1987H858400017	-
dc.citation.woscount	44	-
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