以自行研發之有機金屬化學氣相沉積系統成長發光二極體之磊晶結構

Abstract

本論文使用自行研發之有機金屬化學氣相沉積系統，來成長發光二極體之磊晶結構，其中包含成核層、無參雜之氮化鎵、n參雜之氮化鎵、p參雜之氮化鎵、多重量子井與氮化鋁鎵。過程中使用原子力顯微鏡、光致激發光譜儀、掃描式電子顯微鏡、穿透式電子顯微鏡、X光繞射儀與二次離子質譜儀等材料分析工具確認每一層結構特性。經過一連串的試驗後，將一完整之發光二極體結構成長於2吋藍寶石基板上並成功的將此發光二極體結構點亮。驗證了自行研發之有機金屬化學氣相沉積系統效能可達到與其他進口設備商相同水準。此結果可提升國內發光二極體之產品自主性並提高競爭性。

In this research, we use self-developed metal organic chemical vapor deposition system to grow a LED epitaxy structure. It includes nucleation layer, un-doped GaN, n-doped GaN, p-doped GaN, multiple quantum well and AlGaN. We use atomic force microscope, scanning electron microscope, transmission electron microscope, secondary ion mass spectrometry, X-Ray diffraction and photoluminescence to analyze material properties of each layer. After a series of experiments, we successfully grow a LED epitaxy structure on 2 inch sapphire substrate by self-developed metal organic chemical vapor deposition system.