使用砷化銦鎵假型高速電子移動電晶體之單晶毫米波倍頻器及新式寬頻開關之設計

Abstract

這篇論文中展示了使用砷化銦鎵假型高速電子移動電晶體之單晶毫米波的兩種電路，包含一個35轉70 GHz的毫米波二倍頻器及兩個寬頻開關。首先，仔細描述了倍頻器的設計方法，再利用B類的操作點去完成一個在輸入為1 dBm時有其最大的轉換增益為 -8.4dB 的35轉70 GHz之二倍頻器，此設計在其中心頻率35 GHz附近有1 GHz左右的頻寬而且有著平坦的轉換增益。其次，也詳盡的描述了寬頻毫米波開關的設計方法並且展示一個從24到65 GHz的單刀單擲開關與一個從30.5到64.5 GHz的單刀雙擲開關之實例。24到65 GHz的單刀單擲開關之設計有小於 3dB 的介入損耗與大於 30dB 的隔絕度，在中心頻率為44.5 GHz處有41 GHz的頻寬與平坦的介入損耗。30.5到64.5 GHz的單刀雙擲開關有小於 6dB 的介入損耗與大於 30dB 的隔絕度，在中心頻率為47 GHz處有34 GHz的頻寬與平坦的介入損耗。

Two kinds of MMIC circuits using InGaAs pHEMT are exhibited in this thesis, including a 35-to-70 GHz millimeter-wave frequency doubler and two broadband switches. First, the design methodology of the frequency multiplier is fully described. The class B operation was employed to achieve the 35-to-70 GHz frequency doubler with measured maximally conversion gain of -8.4 dB for 1 dBm input power. This design has 1 GHz bandwidth centered at 35 GHz for a flat conversion gain. Secondly, the design methodology of broadband millimeter-wave switches is shown in detail, along with the demonstrations of a 24-to-65 GHz SPST switch and a 30.5-to-64.5 GHz SPDT switch. For the designed 24-to-65 GHz SPST switch, the measured insertion loss is less than 3 dB and the isolation is better than 30 dB. It has 41 GHz bandwidth centered at 44.5 GHz for a flat insertion loss. For the design of 30.5-to-64.5 GHz SPDT switch, the measured insertion loss is less than 6 dB and the isolation is better than 30 dB with a total bandwidth of 34 GHz centered at 47 GHz for a flat insertion loss.