标题: a-IGZO 薄膜电晶体的制作与特性分析
Fabrication and Characterization of a-IGZO Thin Film Transistors
作者: 颜同伟
Yen, Tung-Wei
林鸿志
黄调元
Lin, Horng-Chih
Huang, Tiao-Yuan
电子研究所
关键字: 金属氧化物;铟镓锌氧化物;制程参数;热退火;热稳定性;迟滞特性;metal oxide semiconductor;a-IGZO;manufacture parameters;thermal annealing;temperature instability;hysteresis characteristics
公开日期: 2010
摘要: 在本篇论文中,我们成功利用射频溅镀的方式制造出a-IGZO薄膜电晶体。由于射频溅镀拥有制程温度低、大面积均匀性佳的薄膜特性,使得此项技术成为制作a-IGZO通道层的主要方法。我们藉由调整a-IGZO薄膜沉积制程参数,包括氧气流量和制程功率控制,进行制作a-IGZO通道层应用于薄膜电晶体的元件特性分析,以得到适切的制程参数。然后对利用适切的制程参数制作的a-IGZO薄膜电晶体进行后段热退火,或增加一层高掺杂浓度的IGZO薄膜于源/汲极和a-IGZO 主动层之间,以了解其对于元件特性的影响。
此外,在适切的a-IGZO薄膜电晶体上利用变温量测来探讨于元件电性的稳定性。最后,我们也发现在不同制程参数下所制作a-IGZO通道层的薄膜电晶体拥有不同大小迟滞现象,因此对于迟滞现象而言,其a-IGZO通道层的制程参数有显着的影响。
In this thesis, we have successfully fabricated a-IGZO TFTs by depositing the channel films with a radio frequency (RF) sputter. Because the RF sputters have merits of low manufacture temperature and good uniformity on a large scale, making this deposition technique highly suitable for fabrication of the a-IGZO devices. In this thesis, the impacts of the deposition conditions, such as oxygen flow and deposition power, on the properties of the a-IGZO films are carefully explored in order to find suitable manufacture parameters. And then, the a-IGZO TFTs fabricated with the suitable manufacture parameters were subjected to different post annealing treatments to study the effects of the treatments. Moreover, effects of an n+ layer inserted between S/D metal and a-IGZO channel are demonstrated to be useful for enhancing the device’s output performance.
We’ve also investigated the temperature stability of the devices by measuring the device characteristics at different temperatures. Finally, the hysteresis properties of a-IGZO TFTs are addressed and verified that the deposition parameters of the a-IGZO channel layer have a significant impact on the hysteresis window.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079811531
http://hdl.handle.net/11536/46711
显示于类别:Thesis


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