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dc.contributor.authorCHEN, CFen_US
dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:06:09Z-
dc.date.available2014-12-08T15:06:09Z-
dc.date.issued1986-10-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/4716-
dc.language.isoen_USen_US
dc.titleA CHARACTERIZATION MODEL FOR RAMP-VOLTAGE-STRESSED IV CHARACTERISTICS OF THIN THERMAL OXIDES GROWN ON SILICON SUBSTRATEen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume29en_US
dc.citation.issue10en_US
dc.citation.spage1059en_US
dc.citation.epage1068en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department工學院zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentCollege of Engineeringen_US
dc.identifier.wosnumberWOS:A1986E469700008-
dc.citation.woscount28-
Appears in Collections:Articles