氮化鋁鎵/氮化鎵高載子遷移率電晶體之電性量測與大訊號模型

Abstract

氮化鎵材料本身具有的優秀材料特性，如：高抗熱、高崩潰電壓、高電子飽和速度、優秀的壓電效應以及高電流密度，非常適合應用於高速與高溫操作的環境。本研究的目的，在測量氮化鋁鎵/氮化鎵高載子遷移率電晶體之電性特性與參數，並說明量測方法與討論，包含了載子缺陷效應、阻性與感性負載切換實驗、以及臨限電壓與閘極漏電流量測，以提供電路設計之必要資訊，最後利用IsSpice電路模擬軟體建立其大訊號等效電路模型，便於在電路設計上的修改與模擬。

GaN material has excellent material properties, such as high heat, high breakdown voltage, high electron saturation velocity, excellent piezoelectric effect and high current density, which is very suitable for operating in high-speed and high temperature environment. The purpose of this study is the measurements of AlGaN / GaN high electron mobility transistor's electrical characteristics and parameters, including charge trapping effect, resistive and inductive load switching test, threshold voltage and gate leakage measurements, by describing and discussing the method of these measurements to provide the necessary information for circuit design, and finally model the large-signal equivalent circuit in IsSpice simulation software for circuit design and simulation.