完整後設資料紀錄
DC 欄位語言
dc.contributor.author曾國陞en_US
dc.contributor.authorTseng, Kuo-Sengen_US
dc.contributor.author吳光雄en_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.date.accessioned2014-12-12T01:49:33Z-
dc.date.available2014-12-12T01:49:33Z-
dc.date.issued2011en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079821557en_US
dc.identifier.urihttp://hdl.handle.net/11536/47488-
dc.description.abstract在本論文中,我們使用脈衝雷射蒸鍍法在藍寶石基板上製備硒化 鉍薄膜,並利用改變一系列基板溫度使薄膜成長條件最佳化。藉由 X 光繞射、掃描式電子顯微鏡、霍爾儀器的量測來觀察樣品的晶格結構、 表面樣貌及測量其載子濃度。透過本研究群所建立之超快光激發探測 技術,研究其超快載子動力學行為。我們利用同調光頻聲子、同調聲 頻聲子分析硒化鉍薄膜的瞬時反射率的高頻以及低頻振盪訊號並發 現薄膜表面呈現鉍富含的情況。zh_TW
dc.description.abstractIn this thesis, we have prepared bismuth selenide thin films which were grown on Sapphire(0001) substrates by pulsed laser deposition(PLD) and change various substrate temperature to get optimization. The surface morphology of samples with various substrate temperature was studied by means of Scanning Electron Microscopy (SEM).The crystal structure and carrier concentration were investigated by means of X-Ray Diffraction (XRD) and Hall measurement.The ultrafast carrier dynamics behavior have been studied by Optical Pump-Probe measurement (OPOP) . We use coherent optical phonon、coherent acoustic phonon to anlyze high frequency and low frequencyΔR/R singnal then find the appearance of Bi-rich condition on thin film surface.en_US
dc.language.isozh_TWen_US
dc.subject光激發探測zh_TW
dc.subject硒化鉍zh_TW
dc.subject薄膜zh_TW
dc.subjectopopen_US
dc.subjectBi2Se3en_US
dc.subjectthin fimen_US
dc.title以飛秒光激發探測系統研究硒化鉍薄膜之超快動力學zh_TW
dc.titleUltrafast Dynamics of Bi2Se3 thin films studied by femtosecond pump-probe spectroscopyen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
顯示於類別:畢業論文


文件中的檔案:

  1. 155701.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。