| 標題: | SELECTIVE EPITAXY ON SILICON BY ATMOSPHERIC-PRESSURE SIH4-HCL CVD |
| 作者: | HSIEH, TP LEE, CL LEI, TF 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 1-三月-1986 |
| URI: | http://hdl.handle.net/11536/4765 |
| ISSN: | 0013-4651 |
| 期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 133 |
| Issue: | 3 |
| 起始頁: | C105 |
| 結束頁: | C105 |
| 顯示於類別： | 期刊論文 |
- 低壓化學氣相沉積鎢膜在極大型積體電路上之運用 / 葉達勳;Yeh, Ta-Hsun;張國明;Chang Kow-Ming
- Deposition properties of selective tungsten chemical vapor deposition / Yeh, WK;Chen, MC;Wang, PJ;Liu, LM;Lin, MS
- One-Step Ge/Si Epitaxial Growth / Wu, Hung-Chi;Lin, Bi-Hsuan;Chen, Huang-Chin;Chen, Po-Chin;Sheu, Hwo-Shuenn
- 化學氣相沉積反應器之數值模擬 / 林育辰;Lin, Yu-Cheng;陳慶耀;Chen, Ching-Yao
- Characteristics of selective chemical vapor deposition of tungsten on aluminum with a vapor phase precleaning technology / Chang, KM;Yeh, TH;Wang, SW;Li, CH
- Properties and thermal stability of chemically vapor deposited W-rich WSix thin films / Wang, MT;Lin, YC;Chuang, MS;Chun, MC;Chen, LJ
- Effect of surface pretreatment of submicron contact hole on selective tungsten chemical vapor deposition / Yeh, WK;Chen, MC;Lin, MS
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