AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, CY	en_US
dc.contributor.author	HUANG, GS	en_US
dc.contributor.author	CHEN, HH	en_US
dc.contributor.author	TSENG, FC	en_US
dc.contributor.author	SHIH, CT	en_US
dc.date.accessioned	2014-12-08T15:06:13Z	-
dc.date.available	2014-12-08T15:06:13Z	-
dc.date.issued	1985-12-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4788	-
dc.language.iso	en_US	en_US
dc.title	AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1263	en_US
dc.citation.epage	1269	en_US
dc.contributor.department	工學院	zh_TW
dc.contributor.department	College of Engineering	en_US
dc.identifier.wosnumber	WOS:A1985AXH4700013	-
dc.citation.woscount	5	-
顯示於類別：	期刊論文