Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure

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DC 欄位	值	語言
dc.contributor.author	Yang, WL	en_US
dc.contributor.author	Lin, CJ	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Liu, DG	en_US
dc.contributor.author	Lei, TF	en_US
dc.date.accessioned	2014-12-08T15:01:42Z	-
dc.date.available	2014-12-08T15:01:42Z	-
dc.date.issued	1997-06-19	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/488	-
dc.description.abstract	A method is introduced for suppressing the penetration of boron for BF2+-implanted pMOS devices with a stacked amorphous/ poly-Si (SAP) gate structure. It is shown that after inductive-coupling-nitrogen-plasma (ICNP) treatment, boron diffusion through the thin gale oxide is largely suppressed. As shown from the charge-to-breakdown measurements, the ICNP process will improve the quality of pMOS devices, with Q(bd) three times higher than for the control samples.	en_US
dc.language.iso	en_US	en_US
dc.subject	MOS integrated circuits	en_US
dc.subject	plasma	en_US
dc.title	Suppression of boron penetration by using inductive-coupling-nitrogen-plasma in stacked amorphous/polysilicon gate structure	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	13	en_US
dc.citation.spage	1139	en_US
dc.citation.epage	1140	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000072040900027	-
dc.citation.woscount	1	-
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