雙接面砷化鎵量子點太陽能電池之數值分析

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	石謦毓	en_US
dc.contributor.author	Shih, Ching yu	en_US
dc.contributor.author	林建中	en_US
dc.date.accessioned	2014-12-12T01:54:53Z	-
dc.date.available	2014-12-12T01:54:53Z	-
dc.date.issued	2012	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#GT079906506	en_US
dc.identifier.uri	http://hdl.handle.net/11536/49031	-
dc.description.abstract	我們提出了一種新的組合，即雙接面砷化鎵量子點太陽能電池和數值研究。我們建立了我們的結構，並且使用MATLABR以及商用軟體SilvacoR和APSYSR。通過修改後的吸收係數k，和有效的量子點相關太陽能電池的帶隙的載子吸收適於一個適當的參雜物。最後的計算示出的最佳效率增強功能是約1.11倍的非量子點的嵌入式太陽能電池。這樣的設計有很大的潛力，實現三接面的串聯型太陽能電池。	zh_TW
dc.description.abstract	A novel combination of quantum dot intermediate band solar cell and dual-junction tandem cell is proposed and studied numerically. We built our device model by using MatlabR coding and commercial software SilvacoR and APSYSR. A proper inclusion of quantum-dot-related carrier absorption is adapted through modified extinction coefficient k, and effective band gap of the device. The final calculation shows the optimal efficiency enhancement is about 1.11 times of the non-quantum-dot embedded device. This design has great potential to realize a triple junction result with a dual-junction photovoltaic device.	en_US
dc.language.iso	en_US	en_US
dc.subject	太陽能電池	zh_TW
dc.subject	太陽能電池	zh_TW
dc.subject	Solar cell	en_US
dc.subject	Solar cell	en_US
dc.title	雙接面砷化鎵量子點太陽能電池之數值分析	zh_TW
dc.title	Numerical Study of GaAs-Based Dual Junction Quantum Dot Solar Cells	en_US
dc.type	Thesis	en_US
dc.contributor.department	影像與生醫光電研究所	zh_TW
顯示於類別：	畢業論文

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