利用實驗驗證場效電晶體之汲極與源極之遠距庫倫效應

Abstract

由近年研究得知，元件尺寸縮減時電子遷移率會伴隨遞減，這也指出了有額外的碰撞機制存在，並且此機制會對下一世代的元件造成很大的影響。因此本篇論文主旨係利用實驗萃取額外遷移率之溫度係數，進而探討Ｎ型超短通道場效電晶體下的散射機制。研究內容主要為我們第一次提出實驗證據對於當元件實際通道長度小於40奈米會被存在於高濃度的源極與汲極的電漿電子所造成的遠距庫倫散射機制所影響。這一系列的的研究方法為透過載子遷移率的溫度效應以及利用二維模擬器對元件建立的模型來取得重要參數。此外，我們也提供了另一項證據，是我們在大汲極電壓下量測到的轉導值與文獻中考慮遠距庫倫效應下的模擬值相符。

Electron mobility degradation is currently encountered in highly scaled devices. This means that additional scattering mechanisms exist and will become profoundly important in next generation of devices. The aim of this work is to, for first time, present experimental evidence for the existence of long-range Coulomb effects due to plasmons (collective behaviors of fluctuating dipoles) in high-density source/drain (S/D) of MOSFETs, particularly for the metallurgical channel length less than about 40 nm. This is obtained through temperature-dependent mobilities via TCAD-based inverse modeling. Other evidence is further produced in terms of the measured transconductance at high drain voltage, which is comparable with that of sophisticated simulations in the literature taking into account long-range Coulomb interactions.