完整後設資料紀錄
DC 欄位語言
dc.contributor.author吳展志en_US
dc.contributor.authorWu, JanJren_US
dc.contributor.author鄭裕庭en_US
dc.contributor.authorCheng, Yu-Tingen_US
dc.date.accessioned2014-12-12T01:55:11Z-
dc.date.available2014-12-12T01:55:11Z-
dc.date.issued2012en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079911576en_US
dc.identifier.urihttp://hdl.handle.net/11536/49121-
dc.description.abstract本論文主要分為兩個部分,分別為應用於兆赫波傳輸系統之號角天線的設計及製作,以及寬頻連接器之製作。號角天線部分,本論文成功製作出應用於500兆赫茲的號角天線。而此天線製作共分為三個主要結構,分別是斜角、波導以及基板。在使用覆晶技術「金-金熱壓合技術」將這三塊結構堆疊而成該號角天線;此技術優點相較於傳統的銲料接合,可有效免除結構連結之間的寄生效應。而另一個應用於兆赫波傳輸系統為寬頻連接系統,本連結結構乃利用了共震器耦合的技術,使兩個共振器透過磁場及電場時線能量的傳送,使兆赫及訊號能夠由晶片之一端傳到另一晶片之上。並提出藉由該結構對於對準的誤差之高靈敏度,未來亦也可以作為覆晶接合製程技術中對準標計之應用。zh_TW
dc.description.abstractIn this thesis, there are two passives developed for THz transceiver applications. They are horn antenna, and broadband interconnect system, respectively. For the part of horn antenna, we utilize silicon micromaching technique and flip-chip bonding technique to to fabricate the horn antenna. the horn antenna comprises three parts including horn flare, waveguide and resonanting substrate which will be integrated using flip chip technique. This antennacan have the lowestparasitic effects resulted by the solder bump, which is usually used for chip assembly. For the part of broadband interconnect, resonating coupling structures are designed and fabricated on a silicon carrier and the chip to be integrated with the carrier for Through the field coupling this system, the signal up to 200GHz can be transmitted in the interconnects between chips Since the coupling is very sensitive to the alignment of the coupling structure, we also propose to utilize it for characterizing the precision of flip chip bonding.en_US
dc.language.isoen_USen_US
dc.subject兆赫波zh_TW
dc.subject寬頻連接器zh_TW
dc.subject號角天線zh_TW
dc.subject覆晶接合zh_TW
dc.subjectTHzen_US
dc.subjectBoadband interconnecten_US
dc.subjectHorn antennaen_US
dc.subjectFlip Chip Bondingen_US
dc.title應用於兆赫波矽基系統封裝技術之被動元件製程開發zh_TW
dc.titleFabrication of THz Passives on a Silicon Carrier for THz SoP (System on package) Applicationen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
顯示於類別:畢業論文