A HIGH-DENSITY MOS STATIC RAM CELL USING THE LAMBDA BIPOLAR-TRANSISTOR

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DC Field	Value	Language
dc.contributor.author	WU, CY	en_US
dc.contributor.author	LIU, YF	en_US
dc.date.accessioned	2014-12-08T15:06:22Z	-
dc.date.available	2014-12-08T15:06:22Z	-
dc.date.issued	1983	en_US
dc.identifier.issn	0018-9200	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4941	-
dc.language.iso	en_US	en_US
dc.title	A HIGH-DENSITY MOS STATIC RAM CELL USING THE LAMBDA BIPOLAR-TRANSISTOR	en_US
dc.type	Letter	en_US
dc.identifier.journal	IEEE JOURNAL OF SOLID-STATE CIRCUITS	en_US
dc.citation.volume	18	en_US
dc.citation.issue	2	en_US
dc.citation.spage	222	en_US
dc.citation.epage	224	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1983QS53700012	-
dc.citation.woscount	6	-
Appears in Collections:	Articles

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