标题: | 氮化铝镓/氮化镓高电子移导率电晶体封装热分析 Thermal Analysis of Packaged AlGaN/GaN Power HEMT |
作者: | 李奇颖 郑泗东 机械工程学系 |
关键字: | 氮化铝镓/氮化镓高电子移导率电晶体;热分析;IR红外线热分析仪;Raman光谱仪;ANSYS ICEPAK模拟;AlGaN/GaN HEMT;Thermal Analysis;IR thermography microscope;Micro-Raman spectroscopy;ANSYS ICEPAK simulation |
公开日期: | 2012 |
摘要: | 氮化铝镓/氮化镓高电子移导率电晶体(AlGaN/GaN HEMT)具有宽能隙(约3.4Ev)、高崩溃电压、高臨界崩溃电场以及高电子饱和漂移速率、高峰值电子速率、高电子饱和速率等优点,因此适用于功率电子方面以及高频通讯方面的应用。本研究针对AlGaN/GaN HEMT于功率电子元件之应用,因所需的功率及发热密度较大,所以探讨AlGaN/GaN HEMT封装元件热分析之重要性。分析在不同的封装制程下,利用热阻计算及ANSYS ICEPAK模拟以求得较佳的封装制程方式。功率元件在电性操作下必定会有功率的损失,其损失的功率大部分会转化成热的形式经热传导由元件到封装再以热对流传热至外部环境。本研究先以IR红外线热分析、Raman光谱量测与IV Curve温度曲线来实际量测封装AlGaN/GaN HEMT在电性测试下之温度分布及传热情形,并计算量测当下元件损失功率及元件效率,再以模拟结果与之验证。由模拟的误差、封装型式的改良、量测方法的准确性,寻求更好的散热途径及封装结构以提升封装的功率散失及最佳的封装热管理。 AlGaN/GaN High electron mobility transistor(AlGaN/GaN HEMT) has many attractive material properties, such as wide bandgap(about 3.4 eV), high breakdown voltage, high critical breakdown field and high saturation electric drift velocity, high peak electron velocity, high electron saturation velocity and good thermal conductivity, which make it suitable for power electronics and Radio frequency (RF) communication applications. This study describes AlGaN/GaN HEMT for power electronic application. Therefore, the thermal analysis technology plays an important role in the high power and high power density packaging. First, use thermal resistance calculation and ANSYS ICEPAK simulation to analysis different packaging processes. Then, calculate the power loss and measure the temperature distribution of packaged AlGaN/GaN HEMT under the DC test by using three temperature measurement such as IR thermography microscope, Micro-Raman spectroscopy and IV-Curve electrical measurement. Finally, the simulation result is verified by compare it with experimental observations. Thermal simulation is used when designing a new device, in the design of the placement of the dissipating elements on the chip and for an efficient thermal management. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079914605 http://hdl.handle.net/11536/49496 |
显示于类别: | Thesis |