| Title: | A MODEL FOR BORON DEPOSITION IN SILICON USING A BBR3 SOURCE |
| Authors: | GUO, SF CHEN, WS 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| Issue Date: | 1982 |
| URI: | http://hdl.handle.net/11536/4956 |
| ISSN: | 0013-4651 |
| Journal: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 129 |
| Issue: | 7 |
| Begin Page: | 1592 |
| End Page: | 1596 |
| Appears in Collections: | Articles |
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- A SIMPLE-MODEL FOR THE DEPOSITION OF BORON IN SILICON BY USING A BN DIFFUSION SOURCE / GUO, SF
- Retardation in the chemical-mechanical polish of the boron-doped polysilicon and silicon / Yang, WL;Cheng, CY;Tsai, MS;Liu, DG;Shieh, MS
- The characterization of boron-doped carbon nanotube arrays / Chen, CF;Tsai, CL;Lin, CL
- LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION / CHEN, TP;LEI, TF;LIN, HC;CHANG, CY;HSIEH, WY
- CHARACTERISTICS OF BORON-DIFFUSION IN POLYSILICON SILICON SYSTEMS WITH A THIN SI-B LAYER AS DIFFUSION SOURCE / CHEN, TP;LEI, TF;LIN, HC;CHANG, CY
- A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICES / LIN, CY;JUAN, KC;CHANG, CY;PAN, FM;CHOU, PF
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