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dc.contributor.author喻祖祥en_US
dc.contributor.authorYu, Tsu-Hsiangen_US
dc.contributor.author林志忠en_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2014-12-12T01:57:30Z-
dc.date.available2014-12-12T01:57:30Z-
dc.date.issued2011en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079921540en_US
dc.identifier.urihttp://hdl.handle.net/11536/49730-
dc.description.abstract我用電弧爐製作了一系列無序系統的塊材Al100-xTix樣品,其x的範圍由0至5。在本研究中,對樣品進行電阻率量測,溫度量測範圍由10至500 K。結果顯示,樣品的室溫電阻率 由2.7 cm (純鋁)提升至4.7 cm (摻雜5%鈦的鋁鈦合金)。   再將實驗結果與Bloch-Gru ̈neisen和electron-phonon-impurity interference兩個模型擬合,獲得Debye溫度由425降至364 K。 此外,我們觀察到在高溫時,樣品之電阻率可由Bloch-Gru ̈neisen模型完整描述;在低溫時,electron-phonon-impurity interference所貢獻的電阻率,因無序程度的增加而增強。zh_TW
dc.description.abstractWe have prepared a series of disorder system sample which are Al100-xTix bulks with x varying from 0 to 5 by a standard arc-melting method. The resistivities of these bulks were measured from 10 to 500 K. The room temperature resistivities for our samples vary from 2.7 cm (pure) to 4.7 cm (5% doped). Comparing our measured results with Bloch-Grüneisen and electron-phonon-impurity interference theories, we have extracted Debye temperature from 425 down to 364 K. The measured resistances are well described by the Bloch-Grüneisen law between 100 and 500 K. In low temperature regime, leading to disordered, the electron-phonon-impurity interference effect contributes significantly to the measured resistivities.en_US
dc.language.isozh_TWen_US
dc.subject鋁鈦合金zh_TW
dc.subject德拜溫度zh_TW
dc.subject無序程度zh_TW
dc.subjectAlTi Alloyen_US
dc.subjectDebye Temperatureen_US
dc.subjectDisorderen_US
dc.title鋁鈦合金無序程度與德拜溫度關係zh_TW
dc.titleDisorder Dependent Debye Temperature in Al100-xTix Alloyen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
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