運用於驅動有機發光二極體之垂直式通道有機高分子電晶體

Abstract

本論文將改善之垂直式空間電荷限制電晶體(SCLT)應用於作為有機發光二極體(OLED)之驅動電晶體。過去SCLT雖然可以在 -2 V 以下做操作，但是若要以驅動 OLED 作為應用，至少需要 -7 V 以上才能達到最基本需求。因此在論文第一部分中，增加 SCLT 之絕緣層 poly(4-vinylphenol) (PVP) 厚度，來改善以往在高偏壓時容易崩潰的情況。目前將 PVP 厚度增加到 400 nm ，主動層 poly(3-hexylthiophene) (P3HT) 使用液態製成刮刀塗佈法，可以操作在電壓 -15 V 並達到 45 mA/cm^2；主動層使用旋轉塗佈法可以得到輸出阻抗 17871 Ω∙cm^2。並以連接線方式將 SCLT 作為綠光 OLED 驅動，可以在 -15 V 得到 2132 cd/m^2，此外亦使用 Silvaco TCAD 模擬軟體來驗證實驗。第二部分對 SCLT 結構上會造成漏電之處做初步改善，因為基極 (Base electrode)之電流是造成漏電的來源之一，所以將絕緣性的 polystyrene (PS) 使用轉印的方式將其包覆在基極電極上，可達到降低一個次方。

Vertical-channel space-charge-limited transistor (SCLT) serves as organic light-emitting diode (OLED) driving is a major purpose in this thesis. In the past, SCLT usually operate under -2 V, but it is not enough for OLED driving. SCLT is required at least -7 V operation voltage when it’s connected with OLED. In this work, increasing the thickness of insulator poly(4-vinylphenol) (PVP) is in order to improve breakdown phenomenon when SCLT operate at high voltage. Theon-current densityof SCLT whose thickness of PVP is 400 nm is 45 mA/cm^2at -15 V and its active layer of poly(3-hexylthiophene) (P3HT) is deposited by solution process blade coating. The output resistance 17871 Ω∙cm^2 can be also reached by spin coating P3HT and 500 nm PVP.Besides, the Silvaco TCAD software is used to verify the experiment.It is obtained 2132 cd/m^2 at -15V when SCLT is connected with a green light OLED by electric wires.In the second part of thesis, decreasing one order of leakage current by imprinting polystyrene (PS) insulating layer on base electrode is demonstrated in this thesis.