有機薄膜電晶體半導體層之圖案化製程

Abstract

在本研究中，我們發展三種半導體層圖案化的方式製作有機薄膜電晶體，也量測圖案化前後之電性差異並且比較不同圖案化製程間的差異。我們發現疏水性的半導體材料並不適用於傳統的光阻圖案化製程，我們接著塗佈另一層聚(4-乙基苯酚)於半導體層之上，雖然可以完成圖案化，但在製程中去光阻的過程仍會對半導體材料造成破壞，因此我們使用兩段式無溶液的蝕刻製程可以完全去除有機溶劑對於半導體層的影響，是一種最適當的圖案化方式。最後，我們也使用此方法製作有機雙極性薄膜電晶體，預計將能應用於製作類互補金氧化物半導體雙反器的製作。

In this study, we developed three different photolithigraphic processes to pattern the semiconductor layers in organic thin-film transistors (OTFTs). We measured electrical characteristics before and after the patterning processes and compared the differences between these processes. We found that the patterning process using conventional photoresists was not suitable for hydrophobic materials, such as poly(3-hexylthiophene). We further applied another protection layer, poly(4-vinylphenol) on the semiconductor layers. However, the active layer was also damaged during the stripping process. Therefore, we developed a two-step, solvent-free etching method, and successfully patterned the semiconductor layer in OTFTs. Finally, we used this approach to fabricate organic ambipolar devices, which can be potentially used for constructing CMOS-like inverters.