A MODEL FOR THE DEPOSITION OF PHOSPHORUS IN SILICON

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	GUO, SF	en_US
dc.date.accessioned	2014-12-08T15:06:25Z	-
dc.date.available	2014-12-08T15:06:25Z	-
dc.date.issued	1982	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4985	-
dc.language.iso	en_US	en_US
dc.title	A MODEL FOR THE DEPOSITION OF PHOSPHORUS IN SILICON	en_US
dc.type	Meeting Abstract	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	129	en_US
dc.citation.issue	3	en_US
dc.citation.spage	C101	en_US
dc.citation.epage	C101	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1982NF15800207	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文