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dc.contributor.authorWang, SJen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorShih, LCen_US
dc.contributor.authorNee, CSen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:01:43Z-
dc.date.available2014-12-08T15:01:43Z-
dc.date.issued1997-06-01en_US
dc.identifier.issn1051-8223en_US
dc.identifier.urihttp://hdl.handle.net/11536/498-
dc.description.abstractAttempts to fabricate Tl-based superconducting thin films in-situ were made using a two-zone off-axis rf-sputtering method. The effects of Tl2O partial pressure on the phase formation and growth of various Tl-based superconducting phases were first investigated by an ex-situ two zone postannealing scheme to simulate the depsoition environ ment of subsequent in-situ process. The conditions obtained were then used as guidelines for in-situ processes. The rf-sputtering system used for in-situ de position is equipped with heating facilities capable of controlling the temperatures of the substrates and the Tl2O3 source separately. Preliminary results indicate that, by varying the substrate temperature and the partial pressure of Tl2O in a similar manner, Tl-based superconducting phases can be obtained in-situ with properties comparable to those obtained by two-step annealing processes.en_US
dc.language.isoen_USen_US
dc.titleIn-situ fabrication of Tl-based superconducting thin films by two-zone RF-sputteringen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalIEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITYen_US
dc.citation.volume7en_US
dc.citation.issue2en_US
dc.citation.spage1891en_US
dc.citation.epage1894en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1997XH86600192-
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