| Title: | DEPLETION WIDTHS OF THE METAL-INSULATOR SEMICONDUCTOR (MIS) STRUCTURE |
| Authors: | JEN, CW LEE, CL LEI, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1981 |
| URI: | http://hdl.handle.net/11536/5005 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 24 |
| Issue: | 10 |
| Begin Page: | 949 |
| End Page: | 954 |
| Appears in Collections: | Articles |
- Deep depletion phenomenon of SrTiO3 gate dielectric capacitor / Liu, CY;Chen, BY;Tseng, TY
- 鈦酸鍶閘極氧化層之深空乏層現象與應用在鐵電記憶體之研究 / 陳柏仰;曾俊元;T. Y. Tseng
- A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure / Chang, Tzu-Yueh;Chang, Chun-Lung;Lee, Hsin-Yu;Lee, Po-Tsung
- Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current / Jia, Xingyu;Chen, Sung-Wen Huang;Liu, Yajin;Hou, Xu;Zhang, Yonghui
- Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer / Hsieh, Ting-En;Chang, Edward Yi;Song, Yi-Zuo;Lin, Yueh-Chin;Wang, Huan-Chung
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