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dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:06:27Z-
dc.date.available2014-12-08T15:06:27Z-
dc.date.issued1981en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/5027-
dc.language.isoen_USen_US
dc.titleBARRIER HEIGHT ENHANCEMENT OF THE SCHOTTKY-BARRIER DIODE USING A THIN UNIFORMLY-DOPED SURFACE-LAYERen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume24en_US
dc.citation.issue9en_US
dc.citation.spage857en_US
dc.citation.epage862en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1981MB35700009-
dc.citation.woscount20-
Appears in Collections:Articles