BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER

doi:10.1063/1.328365

標題:	BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER
作者:	WU, CY 電控工程研究所奈米中心 Institute of Electrical and Control Engineering Nano Facility Center
公開日期:	1980
URI:	http://hdl.handle.net/11536/5041 http://dx.doi.org/10.1063/1.328365
ISSN:	0021-8979
DOI:	10.1063/1.328365
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	51
Issue:	9
起始頁:	4919
結束頁:	4922
Appears in Collections:	Articles