Title: | BARRIER HEIGHT REDUCTION OF THE SCHOTTKY-BARRIER DIODE USING A THIN HIGHLY DOPED SURFACE-LAYER |
Authors: | WU, CY 電控工程研究所 奈米中心 Institute of Electrical and Control Engineering Nano Facility Center |
Issue Date: | 1980 |
URI: | http://hdl.handle.net/11536/5041 http://dx.doi.org/10.1063/1.328365 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.328365 |
Journal: | JOURNAL OF APPLIED PHYSICS |
Volume: | 51 |
Issue: | 9 |
Begin Page: | 4919 |
End Page: | 4922 |
Appears in Collections: | Articles |