标题: 考量三重曝光微影技术及平衡光罩密度的非点格式细部绕线方法
Balancing Mask Density on Triple Patterning Lithography Aware Gridless Detailed Routing
作者: 纪凯智
Chi, Kai-Chih
李毅郎
Li, Yih-Lang
资讯科学与工程研究所
关键字: 三重曝光微影技术;绕线方法;平衡光罩密度;Triple Patterning Lithography;Detailed Routing;Balancing Mask Density
公开日期: 2012
摘要: 对小于14 奈米的制程节点,三重曝光微影技术(triple patterning lithography)将一层布局分配到三个光罩可以增加节距与增进解析度。在绕线阶段考虑三重曝光微影技术可以增加布局分割的弹性,而且将布局平均分割到不同光罩上,可以降低边缘位置误差。在本论文中,在考量三重曝光微影技术的非点格式细部绕线方法中同时考虑平衡光罩密度的问题。交换伪颜色及考量密度缝合(stitch)建立用来平衡光罩密度。实验结果显示除了考虑整体光罩密度,额外考虑区域光罩密度与缝合数量的取舍。
For the sub-14nm technology node, triple patterning lithography (TPL) is adopted, which decomposes a single layer into three masks to increase pitch and enhance the resolution. In routing stage, considering TPL can improve the flexibility of layout decomposition. Moreover, layouts with balanced density can reduce edge placement error(EPE)[2]. This work considers the mask density balancing based on triple-patterning lithography aware detailed router[6] to improve the printability. Swapping pseudo colors and density aware stitch generation are proposed to balance mask density. The result shows that there is the trade-off between stitch counts and additionally considering the local density constraint besides the global density constraint.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079955504
http://hdl.handle.net/11536/50423
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