AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR

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DC Field	Value	Language
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:06:28Z	-
dc.date.available	2014-12-08T15:06:28Z	-
dc.date.issued	1980	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5048	-
dc.identifier.uri	http://dx.doi.org/10.1109/T-ED.1980.19877	en_US
dc.language.iso	en_US	en_US
dc.title	AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/T-ED.1980.19877	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	27	en_US
dc.citation.issue	2	en_US
dc.citation.spage	414	en_US
dc.citation.epage	419	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1980JM12500016	-
dc.citation.woscount	15	-
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