| 標題: | GENERALIZED THEORY AND REALIZATION OF A VOLTAGE-CONTROLLED NEGATIVE-RESISTANCE MOS DEVICE (LAMBDA-MOSFET) |
| 作者: | WU, CY LAI, KN WU, CY 電控工程研究所 奈米中心 Institute of Electrical and Control Engineering Nano Facility Center |
| 公開日期: | 1980 |
| URI: | http://hdl.handle.net/11536/5050 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 23 |
| Issue: | 1 |
| 起始頁: | 1 |
| 結束頁: | & |
| Appears in Collections: | Articles |
- AN ANALYSIS AND THE FABRICATION TECHNOLOGY OF THE LAMBDA BIPOLAR-TRANSISTOR / WU, CY
- THE NEW GENERAL REALIZATION-THEORY OF FET-LIKE INTEGRATED VOLTAGE-CONTROLLED NEGATIVE DIFFERENTIAL RESISTANCE DEVICES / WU, CY;WU, CY
- Analysis and design of a new SRAM memory cell based on vertical lambda bipolar transistor / Wang, SM;Wu, CY
- A new compact neuron-bipolar junction transistor (nu BJT) cellular neural network (CNN) structure with programmable large neighborhood symmetric templates for image processing / Wu, CY;Yen, WC
Loading...