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dc.contributor.authorLiou, BWen_US
dc.contributor.authorLee, CLen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorWu, YHen_US
dc.date.accessioned2014-12-08T15:01:44Z-
dc.date.available2014-12-08T15:01:44Z-
dc.date.issued1997-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.3389en_US
dc.identifier.urihttp://hdl.handle.net/11536/509-
dc.description.abstractThis work studied the hydrogen and oxygen plasma effects on the resistivity, effective free carrier concentration, and mobility of As+- and BF2+-doped polycrystalline silicon (polysilicon) thin films of various thicknesses. It was found that the resistivity of a polysilicon thin film increased with the decrease of the thickness of the film. This was mainly due to the decrease of effective carrier concentration and the mobility through the decrease of the grain size since the thickness limited regrowth of the film. The hydrogen and/or oxygen plasma treatment decreased the effective carrier concentration of the film through the neutralization of boron and arsenic ions. This effect was more evident for the thinner (< 60 nm) film. The plasma treatment also decreased the mobility of the film, unless the thickness of the film was thinner than 50 nm, for which, the mobility instead increased since the plasma passivation effect became dominant.en_US
dc.language.isoen_USen_US
dc.subjectpolysiliconen_US
dc.subjectplasma treatmenten_US
dc.subjectneutralizationen_US
dc.subjectpassivationen_US
dc.titleHydrogen and oxygen plasma effects on polycrystalline silicon thin films of various thicknessesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.36.3389en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.issue6Aen_US
dc.citation.spage3389en_US
dc.citation.epage3395en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000073628100006-
dc.citation.woscount5-
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