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| High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices | 105 |
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| High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices | 105 |
| 檢視 |
|---|
| 檢視 | |
|---|---|
| 中國 | 90 |
| 美國 | 15 |
| 檢視 | |
|---|---|
| Shenzhen | 88 |
| Kensington | 7 |
| Menlo Park | 7 |
| Beijing | 1 |
| Edmond | 1 |
| Zhengzhou | 1 |