統計資料

總造訪次數

檢視
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor 103

本月總瀏覽

一月 2024 二月 2024 三月 2024 四月 2024 五月 2024 六月 2024 七月 2024
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor 0 0 1 0 0 1 0

檔案下載

檢視

國家瀏覽排行

檢視
中國 96
美國 6

縣市瀏覽排行

檢視
Shenzhen 95
Kensington 5
Menlo Park 1
Shanghai 1