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dc.contributor.authorWang, CCen_US
dc.contributor.authorWu, JCen_US
dc.date.accessioned2014-12-08T15:01:44Z-
dc.date.available2014-12-08T15:01:44Z-
dc.date.issued1997-06-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/4.585287en_US
dc.identifier.urihttp://hdl.handle.net/11536/513-
dc.description.abstractConventional charge pump circuits use a fixed switching frequency that leads to power efficiency degradation for loading less than the rated loading. This paper proposes a level shifter design that also functions as a frequency converter to automatically vary the switching frequency of a dual charge pump circuit according to the loading. The switching frequency is designed to be 25 kHz with 12 mA loading on both inverting and noninverting outputs. The switching frequency is automatically reduced when loading is lighter to improve the power efficiency. The frequency tuning range of this circuit is designed to be from 100 Hz to 25 KHz. A start-up circuit is included to ensure proper pumping action and avoid latch-up during power-up. A slow turn-on, fast turn-off driving scheme is used in the clock buffer to reduce power dissipation, The new dual charge pump circuit was fabricated in a 3-mu m p-well double-poly single-metal CMOS technology with breakdown voltage of 18 V, the die size is 4.7 x 4.5 mm(2), For comparison, a charge pump circuit with conventional level shifter and clock buffer was also fabricated. The measured results show that the new charge pump has two advantages: 1) the power dissipation of the charge pump is improved by a factor of 32 at no load and by 2% at rated loading of 500 Omega and 2) the breakdown voltage requirement is reduced from 19.2 to 17 V.en_US
dc.language.isoen_USen_US
dc.subjectcharge pumpen_US
dc.subjectCMOS analog integrated circuiten_US
dc.subjectlatch-upen_US
dc.titleEfficiency improvement in charge pump circuitsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/4.585287en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume32en_US
dc.citation.issue6en_US
dc.citation.spage852en_US
dc.citation.epage860en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997XA68600009-
dc.citation.woscount72-
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