次微米大斜角植入式金氧半元件之特性分析與設計準則

Full metadata record

DC Field	Value	Language
dc.contributor.author	周鵬程	en_US
dc.contributor.author	莊紹勳	en_US
dc.date.accessioned	2014-12-12T02:03:04Z	-
dc.date.available	2014-12-12T02:03:04Z	-
dc.date.issued	1984	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT732428004	en_US
dc.identifier.uri	http://hdl.handle.net/11536/52022	-
dc.language.iso	en_US	en_US
dc.title	次微米大斜角植入式金氧半元件之特性分析與設計準則	zh_TW
dc.title	Characterization and design guidelines of submicron LATID (LArge Tilt-angle Implanted Drain) MOS devices	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
Appears in Collections:	Thesis