標題: | Improved Capacitance Density and Reliability of High-k Ni/ZrO(2)/TiN MIM Capacitors Using Laser-Annealing Technique |
作者: | Tsai, C. Y. Chiang, K. C. Lin, S. H. Hsu, K. C. Chi, C. C. Chin, Albert 電機工程學系 Department of Electrical and Computer Engineering |
公開日期: | 1-七月-2010 |
摘要: | We have fabricated high-k Ni/ZrO(2)/TiN metal-insulator-metal capacitors with a very high 52-fF/mu m(2) capacitance density, a low leakage current of 1.6 x 10(-7) A/cm(2), and good ten-year reliability with a small Delta C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO(2) due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO(2) tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment. |
URI: | http://dx.doi.org/10.1109/LED.2010.2049636 http://hdl.handle.net/11536/5203 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2049636 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 31 |
Issue: | 7 |
起始頁: | 749 |
結束頁: | 751 |
顯示於類別: | 期刊論文 |